amplifiers - linear & power - smt 1 HMC1082LP4E v00.0513 g aas p hemt mmic medium power amplifier, 5.5 - 18 ghz functional diagram features high saturated output power: 26 dbm @ 26% pae high output ip3: 35 dbm high gain: 22 db high p1db output power: 24 dbm dc supply: +5v @ 220 ma compact 24 lead 4x4 mm smt package: 16 mm 2 typical applications general description the HMC1082LP4E is a gaas phemt mmic driver amplifer with an integrated temperature compensated on-chip power detector which operates between 5.5 and 18 ghz. the amplifer provides 22 db of gain, +35 dbm output ip3, and +24 dbm of output power at 1 db gain compression, while requiring 220 ma from a +5v supply. the HMC1082LP4E is capable of supplying +26 dbm of saturated output power with 26 % pae and is housed in a compact leadless 4x4 mm plastic surface mount package. the HMC1082LP4E is an ideal driver amplifer for a wide range of applications including point-to-point radio from 5.5 to 18 ghz and marine radar at 9 ghz. the HMC1082LP4E may also be used for 6 to 18 ghz ew and ecm applications. parameter min typ . max min typ. max min typ max units frequency range 5.5 - 6.5 6.5 - 1 7 17 - 18 ghz gain 21.5 23.5 20 .5 22.5 20 22 db gain variation over temperature 0.01 21 0.01 01 0.015 db/c input return loss 22 1 2 7. 5 dbm output return loss 10 1 4 17. 5 dbm output power for 1 db compression (p1db) 21 24 21 24 20.5 23.5 dbm saturated output power (psat) 25.5 26 24.5 dbm output third order intercept (ip3) [2] 36 35 33.5 dbm supply current (idd) 220 220 220 ma [1] adjust vgg between -2 to 0v to achieve idd = 220ma typical [2] m easurement taken at pout / tone = +12dbm the HMC1082LP4E is ideal for: ? point-to-point radios ? point-to-multi-point radios ? vsat & satcom ? marine radar ? military ew & ecm electrical specifcations t a = +25 c, vdd1 = vdd2 = vdd3 = +5v, idd = +220 ma [1] for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - linear & power - smt 2 HMC1082LP4E v00.0513 g aas p hemt mmic medium power amplifier, 5.5 - 18 ghz broadband gain & return loss gain vs. temperature input return loss vs. temperature output return loss vs. temperature p1db vs. temperature p1db vs. supply voltage -40 -30 -20 -10 0 10 20 30 4 6 8 10 12 14 16 18 20 s21 s11 s22 response (db) frequency (ghz) 12 14 16 18 20 22 24 26 28 30 5.5 8 10.5 13 15.5 18 +25 c +85 c -40 c gain (db) frequency (ghz) -35 -30 -25 -20 -15 -10 -5 0 5.5 8 10.5 13 15.5 18 +25 c +85 c -40 c return loss (db) frequency (ghz) -35 -30 -25 -20 -15 -10 -5 0 5.5 8 10.5 13 15.5 18 +25 c +85 c -40 c return loss (db) frequency (ghz) 12 14 16 18 20 22 24 26 28 30 5.5 8 10.5 13 15.5 18 +25 c +85 c -40 c frequency (ghz) p1db (dbm) 12 14 16 18 20 22 24 26 28 30 5.5 8 10.5 13 15.5 18 4v 4.5v 5v frequency (ghz) p1db (dbm) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - linear & power - smt 3 HMC1082LP4E v00.0513 g aas p hemt mmic medium power amplifier, 5.5 - 18 ghz psat vs. temperature psat vs. supply voltage p1db vs. supply current psat vs. supply current output ip3 vs. temperature [1] output ip3 vs. supply current [1] 12 14 16 18 20 22 24 26 28 30 5.5 8 10.5 13 15.5 18 +25 c +85 c -40 c frequency (ghz) psat (dbm) 12 14 16 18 20 22 24 26 28 30 5.5 8 10.5 13 15.5 18 4v 4.5v 5v frequency (ghz) psat (dbm) 12 14 16 18 20 22 24 26 28 30 5.5 8 10.5 13 15.5 18 180 ma 220 ma 250 ma frequency (ghz) p1db (dbm) 12 14 16 18 20 22 24 26 28 30 5.5 8 10.5 13 15.5 18 180 ma 220 ma 250 ma frequency (ghz) psat (dbm) 20 22 24 26 28 30 32 34 36 38 40 5.5 8 10.5 13 15.5 18 +25 c +85 c -40 c frequency (ghz) ip3 (dbm) 20 22 24 26 28 30 32 34 36 38 40 5.5 8 10.5 13 15.5 18 180 ma 220 ma 250 ma frequency (ghz) ip3 (dbm) [1] pout/tone = +12 dbm for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - linear & power - smt 4 HMC1082LP4E v00.0513 g aas p hemt mmic medium power amplifier, 5.5 - 18 ghz output ip3 vs. supply voltage [1] output im3 @ vdd = +4v output im3 @ vdd = +4.5v output im3 @ vdd = +5v power compression @ 12 ghz gain & power vs. supply current 20 22 24 26 28 30 32 34 36 38 40 5.5 8 10.5 13 15.5 18 4v 4.5v 5v frequency (ghz) ip3 (dbm) 20 30 40 50 60 70 4 6 8 10 12 14 16 7 ghz 9 ghz 12 ghz 15 ghz 17 ghz pout/tone (dbm) im3 (dbc) 20 30 40 50 60 70 4 6 8 10 12 14 16 7 ghz 9 ghz 12 ghz 15 ghz 17 ghz pout/tone (dbm) im3 (dbc) 20 30 40 50 60 70 4 6 8 10 12 14 16 7 ghz 9 ghz 12 ghz 15 ghz 17 ghz pout/tone (dbm) im3 (dbc) 20 21 22 23 24 25 26 27 28 180 190 200 210 220 230 240 250 gain p1db psat idd (ma) gain (db), p1db (dbm), psat (dbm) [1] pout/tone = +12 dbm 0 5 10 15 20 25 30 200 250 300 350 400 450 500 -8 -6 -4 -2 0 2 4 6 8 10 idd pout gain pae pout(dbm), gain(db), pae(%) idd (ma) input power (dbm) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - linear & power - smt 5 HMC1082LP4E v00.0513 g aas p hemt mmic medium power amplifier, 5.5 - 18 ghz gain & power vs. supply voltage reverse isolation vs. temperature power dissipation 20 21 22 23 24 25 26 27 28 4 4.2 4.4 4.6 4.8 5 gain p1db psat vdd (v) gain (db), p1db (dbm), psat (dbm) -80 -70 -60 -50 -40 -30 -20 5.5 8 10.5 13 15.5 18 +25 c +85 c -40 c frequency (ghz) isolation (db) 0.4 0.6 0.8 1 1.2 1.4 -8 -6 -4 -2 0 2 4 6 8 10 7 ghz 10 ghz 12 ghz 14 ghz 17 ghz power dissipation (w) input power (dbm) detector voltage vs. temperature @ 6 ghz 0.0001 0.001 0.01 0.1 1 10 -20 -10 0 10 20 30 +25 c +85 c - 40 c output power (dbm) vref-vdet (v) 0.0001 0.001 0.01 0.1 1 10 -20 -10 0 10 20 30 +25 c +85 c - 40 c output power (dbm) vref-vdet (v) 0.0001 0.001 0.01 0.1 1 10 -20 -10 0 10 20 30 +25 c +85 c - 40 c output power (dbm) vref-vdet (v) detector voltage vs. temperature @ 12 ghz detector voltage vs. temperature @ 18 ghz for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - linear & power - smt 6 HMC1082LP4E v00.0513 g aas p hemt mmic medium power amplifier, 5.5 - 18 ghz outline drawing notes: 1. leadframe material: copper alloy 2. dimensions are in inches [millimeters]. 3. lead spacing tolerance is non-cumulative 4. pad burr length shall be 0.15mm maximum. pad burr height shall be 0.05mm maximum. 5. package warp shall not exceed 0.05mm. 6. all ground leads and ground paddle must be soldered to pcb rf ground. 7. refer to hittite application note for suggested pcb land pattern. drain bias voltage (vdd) 5.5v rf input power (rfin) 20 dbm channel temperature 175 c continuous p diss (t=85 c) (derate 20mw/c 1.81w maximum junction temperature 141 c thermal resistance (r th ) (junction to ground paddle) 49.8 c/w operating temperature -40 c to +85c storage temperature -65 c to 150c esd sensitivity (hbm) class 0, passed 100v part number package body material lead finish msl rating [2] package marking [1] HMC1082LP4E rohs-compliant low stress injection molded plastic 100% matte sn msl1 h1082 xxxx [1] 4-digit lot number xxxx [2] max peak refow temperature of 260 c absolute maximum ratings typical supply current vs. vdd vdd (v) idd (ma) +4 220 +4.5 220 +5 220 adjust vgg1 to achieve idd = 220ma electrostatic sensitive device observe handling precautions package information for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - linear & power - smt 7 HMC1082LP4E v00.0513 g aas p hemt mmic medium power amplifier, 5.5 - 18 ghz pin number function description pin schematic 1, 2, 5, 6, 7, 8, 10, 13, 14, 17, 18, 19, 21, 23 n/c these pins are not connected internally, however all data shown herein was measured with these pins connected to rf/dc ground externally. 3 rf in this pin is dc coupled and matched to 50 ohms. 4, 15 gnd these pins and package bottom must be connected to rf/dc ground. 9 vgg gate control for amplifer. external bypass capacitors of 1000pf, 100pf and 2.2uf are required. 11 vref dc bias of diode biased through external resistor used for temperature compensation of vdet. see application circuit. 12 vdet dc voltage representing rf output power rectifed by diode which is biased through an external resistor. see application circuit. 16 rf out this pin is ac coupled and matched to 50 ohms. 24, 22, 20 vdd1, vdd2, vdd3 drain bias voltage for amplifer. external bypass capac - itors of 1000pf, 100pf and 2.2uf are required. pin descriptions for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - linear & power - smt 8 HMC1082LP4E v00.0513 g aas p hemt mmic medium power amplifier, 5.5 - 18 ghz application circuit for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - linear & power - smt 9 HMC1082LP4E v00.0513 g aas p hemt mmic medium power amplifier, 5.5 - 18 ghz the circuit board used in the application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation circuit board shown is available from hit - tite upon request. evaluation pcb item description j1, j2 pcb mount sma rf connector j5 - j12 dc pin c1 - c4 100pf capacitor, 0402 pkg. c5 - c8 1000pf capacitor, 0402 pkg c9 - c12 2.2uf capacitor, 0402 pkg. r1, r2 40.2k ohm resistor, 0402 pkg. u1 HMC1082LP4E pcb [2] 600-00819-00 evaluation board [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350 or arlon 25fr list of materials for evaluation pcb ev1hmc1082lp4 [1] for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - linear & power - smt 10 HMC1082LP4E v00.0513 g aas p hemt mmic medium power amplifier, 5.5 - 18 ghz notes: for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
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